DocumentCode :
3555814
Title :
A monolithic pressure-pH sensor for esophageal studies
Author :
Huang, J.C.-M. ; Wise, K.D.
Author_Institution :
University of Michigan, Ann Arbor, Michigan
Volume :
28
fYear :
1982
fDate :
1982
Firstpage :
316
Lastpage :
319
Abstract :
This paper describes a single-chip sensor which has been developed to allow the diagnosis of esophageal abnormalities in the ambulatory patient. The chip consists of a capacitive pressure transducer and an ion-sensitive field-effect transistor (ISFET). The pressure transducer uses a boron etch-stopped diaphragm and a batch fabricated lead transfer. The pressure sensitivity is about 1000 ppm/mmHg with a temperature sensitivity of +30 ppm/°C. The ISFET has a pH sensitivity of about 50 mV/pH with a temperature coefficient of about 0.015 pH/°C. These temperature sensitivities are low enough that individual temperature trims of the transducers are eliminated in this application, even though temperature excursions of 30°C can occur simultaneously with pressure and pH changes during swallowing. The chip is compatible with use in a 3 mm OD catheter.
Keywords :
Boron; Catheters; Circuits; Clocks; Esophagus; Etching; Semiconductor device measurement; Sensor phenomena and characterization; Temperature sensors; Transducers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1982 International
Type :
conf
DOI :
10.1109/IEDM.1982.190283
Filename :
1482817
Link To Document :
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