• DocumentCode
    3555820
  • Title

    Superlattice, graded band gap, channeling and staircase avalanche photodiodes towards a solid-state photomultiplier

  • Author

    Capasso, F. ; Tsang, W.T.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    334
  • Lastpage
    337
  • Abstract
    Recent results on a new class of low excess noise avalanche photodiodes (APDs) are discussed. A significant enhancement of the ionization rates ratio has been demonstrated in AlGaAs/GaAs superlattice and graded gap APDs. In addition two novel APDs where only electrons multiply (channeling and staircase APDs) have been disclosed. The staircase APD has lower bias voltage (5-10V) than conventional APDs and virtually noise-free multiplication similarly to a phototube.
  • Keywords
    Avalanche photodiodes; Electrons; Gallium arsenide; Ionization; Photoelectricity; Photomultipliers; Photonic band gap; Solid state circuits; Superlattices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190288
  • Filename
    1482822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555820