Title :
Noise in multi-heterostructure avalanche photodetectors
Author :
Rakshit, S. ; Chakraborti, N.B.
Author_Institution :
Indian Institute of Technology, Kharagpur, India
Abstract :
The multiplication noise in multiheterostructure avalanche photodetectors has been calculated for different degrees of carrier feedback. For this purpose, a multiple-feedback network representation is used which provides a direct method of evaluation of noise performance. The effect of feedback has been found to be appreciable in III-V compound APDs, being less with larger number of stages.
Keywords :
Carrier confinement; Charge carrier processes; Detectors; Feedback; Heterojunctions; Ionization; Noise reduction; Photodetectors; Semiconductor device noise; Signal to noise ratio;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190289
