X-ray lithography system for submicron device fabrication

The fabrication of submicron devices with linewidths as small as 0.2 µm requires an advanced lithography system with the capability of fine line patterning as well as of very accurate pattern placement. Such a system has been realized in the form of an X-ray proximity step and repeat aligner characterized by an exceptionally high resolution (0.2 µm) and alignment accuracy (better than 0.05 µm). A description of the system is given. It includes a high power 13.3 Å rotating anode X-ray source and a high precision alignment and positioning system. X-ray mask fabrication on 0.5 µm thick Si3N4membranes will be outlined. Results demonstrating resolution and alignment performance of the system will be shown.