MOS Transistors in beam-recrystallized polysilicon

The fabrication of transistors with their active channels in recrystallized polysilicon offers the long-desired possibility of readily achievable, total dielectric isolation. Devices with properties approaching those of single-crystal transistors can be obtained in large-grain polysilicon, and the properties can be further improved by using seeded recrystallization to remove the remaining grain boundaries. This paper addresses some of the remaining problem areas which must be controlled before the technique can become a practical process, as well as showing some novel structures, including a new dynamic RAM cell.