Device characterization on monocrystalline silicon grown over SiO2by the ELO (epitaxial lateral overgrowth) process

MOS and lateral bipolar transistors have been fabricated on epitaxial silicon layers which have been laterally overgrown over SiO2. These device characteristics were then compared to those measured on devices fabricated on homo-epitaxial silicon and bulk silicon. The measurements indicate essentially identical MOS device characteristics for all three materials with a typical hole field effect mobility of about 180 cm²/v-s. Lifetime measurements using pulsed C-V techniques on the three materials indicate about an order of magnitude difference between the bulk silicon value and the ELO value with the ELO value being about 20 µS. These lifetime values correlate well with diode and bipolar transistor measurements.