• DocumentCode
    3555853
  • Title

    SOI CMOS circuit performance on graphite strip heater recrystallized material

  • Author

    Malhi, S.D.S. ; Lam, H.W. ; Pinizzotto, R.F.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Texas
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    441
  • Lastpage
    443
  • Abstract
    A CMOS process has been implemented on graphite strip heater recrystallized silicon substrates. The low field electron mobility of 660 cm2/V.sec and hole mobility of 220 cm2/V.sec is obtained. For a gate length of 5 µm and gate oxide thickness of 500 Å, the average inverter delay is 1.85 ns, as obtained from 39 stage ring oscillators with a fan-in and fan-out of 1, operated at 5 V.
  • Keywords
    Circuit optimization; Delay; Electron mobility; Etching; Implants; Inverters; Plasma temperature; Ring oscillators; Silicon carbide; Strips;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190319
  • Filename
    1482853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555853