Title :
SOI CMOS circuit performance on graphite strip heater recrystallized material
Author :
Malhi, S.D.S. ; Lam, H.W. ; Pinizzotto, R.F.
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
Abstract :
A CMOS process has been implemented on graphite strip heater recrystallized silicon substrates. The low field electron mobility of 660 cm2/V.sec and hole mobility of 220 cm2/V.sec is obtained. For a gate length of 5 µm and gate oxide thickness of 500 Å, the average inverter delay is 1.85 ns, as obtained from 39 stage ring oscillators with a fan-in and fan-out of 1, operated at 5 V.
Keywords :
Circuit optimization; Delay; Electron mobility; Etching; Implants; Inverters; Plasma temperature; Ring oscillators; Silicon carbide; Strips;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190319
