DocumentCode
3555865
Title
A regional analytic model for current interruption in high voltage center gated bipolar switches
Author
Kohl, J.E. ; Gammel, J.C. ; Hartman, A.R. ; Hirsch, M.D. ; Riley, T.J. ; Scott, R.S.
Author_Institution
Bell Laboratories, Murray Hill, New Jersey
Volume
28
fYear
1982
fDate
1982
Firstpage
484
Lastpage
487
Abstract
High voltage (500V) crosspoint arrays have been realized in dielectric isolation technology for telecommunications applications. The crosspoint elements can be lateral bipolar devices with center gates such as the gated diode switch. To explain the transient behavior of these devices during current interruption a semi-analytical model has been developed. In spite of the approximate nature of the model, its results agree favorably with the observed properties of the crosspoint, and perhaps more significantly it provides a more quantitative test of the basic understanding of the device operation.
Keywords
Anodes; Cathodes; Circuit testing; Dielectric substrates; Diodes; Electrons; Plasma devices; Switches; Telecommunication switching; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190331
Filename
1482865
Link To Document