DocumentCode
3555889
Title
Laser-assisted poly-Si resistor fuse utilizing silicon lateral flow
Author
Iwai, Takashi ; Sasaki, Nobuo ; Kawamura, Seiichiro ; Nakano, Motoo
Author_Institution
Fujitsu Limited, Kawasaki, Japan
Volume
28
fYear
1982
fDate
1982
Firstpage
568
Lastpage
571
Abstract
A new technology for redundancy circuit utilizing silicon lateral flow is presented. The lateral flow is induced when Ar+laser beam is applied to an electrically pre-heated polysilicon resistor. The polysilicon resistor lies on a 1.0 
m thick SiO2layer having a pair of parallel grooves where the oxide thickness is decreased to 0.1 m. This technology has many advantages, such as clear cut-off of polysilicon, no blowing-up of cover PSG film, and no necessity for accurate positioning of laser spot.
m thick SiO2layer having a pair of parallel grooves where the oxide thickness is decreased to 0.1 m. This technology has many advantages, such as clear cut-off of polysilicon, no blowing-up of cover PSG film, and no necessity for accurate positioning of laser spot.Keywords
Circuits; Fuses; Laser beam cutting; Passivation; Power lasers; Resistance heating; Resistors; Silicon; Substrates; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190355
Filename
1482889
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