• DocumentCode
    3555892
  • Title

    Material and device considerations for selectively doped heterojunction transistors

  • Author

    DiLorenzo, J.V. ; Dingle, R. ; Feuer, M. ; Gossard, A.C. ; Hendel, R. ; Hwang, J.C.M. ; Kastalsky, A. ; Keramidas, V.G. ; Kiehl, R.A. ; O´Connor, Patrick

  • Author_Institution
    Bell Laboratories, Murray Hill, New Jersey
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    578
  • Lastpage
    581
  • Abstract
    The material growth, discrete device fabrication, and ring oscillator fabrication for selectively doped heterostructure transistors (SDHT) is described. MBE growth of high mobility GaAs-AlxGa1-xAS hetero junction structures has resulted in mobilities as high as 1.5 \\times 10^{6} cm2/V sec at ∼4 °K. Devices with gm= 309 mS/mm at 77°K and source-drain resistance as low as 0.69 Ω mm have been fabricated. Eleven stage ring oscillators with propagation delays as low as 17.9 psec at 77°K for ∼ 1 \\\\mu m gate length has been achieved.
  • Keywords
    Delay; Doping profiles; Electron mobility; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; Molecular beam epitaxial growth; Ring oscillators; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190358
  • Filename
    1482892
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555892