DocumentCode :
3555892
Title :
Material and device considerations for selectively doped heterojunction transistors
Author :
DiLorenzo, J.V. ; Dingle, R. ; Feuer, M. ; Gossard, A.C. ; Hendel, R. ; Hwang, J.C.M. ; Kastalsky, A. ; Keramidas, V.G. ; Kiehl, R.A. ; O´Connor, Patrick
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey
Volume :
28
fYear :
1982
fDate :
1982
Firstpage :
578
Lastpage :
581
Abstract :
The material growth, discrete device fabrication, and ring oscillator fabrication for selectively doped heterostructure transistors (SDHT) is described. MBE growth of high mobility GaAs-Alx Ga1-x AS hetero junction structures has resulted in mobilities as high as 
cm2/V sec at ∼4 °K. Devices with gm = 309 mS/mm at 77°K and source-drain resistance as low as 0.69 Ω mm have been fabricated. Eleven stage ring oscillators with propagation delays as low as 17.9 psec at 77°K for ∼ 1 
m gate length has been achieved.
cm2/V sec at ∼4 °K. Devices with g m gate length has been achieved.Keywords :
Delay; Doping profiles; Electron mobility; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; Molecular beam epitaxial growth; Ring oscillators; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1982 International
Type :
conf
DOI :
10.1109/IEDM.1982.190358
Filename :
1482892
Link To Document :
