DocumentCode :
3555895
Title :
0.3 µm Gate length super low noise GaAs MESFET
Author :
Ishiuchi, H. ; Mizuno, H. ; Kaneko, Y. ; Arai, K. ; Suzuki, K.
Author_Institution :
Nippon Electric Co., Ltd., Kawasaki, Japan
fYear :
1982
fDate :
13-15 Dec. 1982
Firstpage :
590
Lastpage :
593
Abstract :
The device technology and RF characteristics of a super low noise GaAs MESFET exhibiting a noise figure of as low as 1.2dB at 12GHz will be presented. The major technologies utilized in this work are the formation of a 0.3µm gate using conventional deepUV/positive photoresist technology, a triple layer epitaxial system using Ga/AsCl3 /H2 and a multi layer passivation scheme utilizing SiO2 and Si3 N4 films. The noise figure of the device ranges from 0.3-0.5dB with 15dB associated gain at 4GHz and 1.2 -1.5dB with 10dB associated gain at 12GHz. The device gate width is 280 
m and the 1dB compression point is as high as 17 dBm. Clearly this device is capable of surviving high levels of incident RF power.
m and the 1dB compression point is as high as 17 dBm. Clearly this device is capable of surviving high levels of incident RF power.Keywords :
Contact resistance; Epitaxial growth; Gallium arsenide; Hydrogen; Lithography; MESFETs; Noise figure; Passivation; Resists; Temperature control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1982 International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/IEDM.1982.190361
Filename :
1482895
Link To Document :
