Influence of an external mechanical force on light emission from strained 1.3 /spl mu/m semiconductor lasers: polarization switching and mode spectra

Author

Klehr, Andreas ; Muller, Rudolf ; Enders, P.

Author_Institution

Max-Born-Inst., Berlin, Germany

fYear

1996

fDate

7-7 June 1996

Firstpage

183

Lastpage

184

Abstract

Summary form only given. We study the dependence of the light power current characteristics and the spectra on strain of 1.3-/spl mu/m ridge waveguide InGaAsP-InP lasers. The polarization of light from strained semiconductor lasers can switch between TE and TM polarization in dependence on the strain in the active layer and the injection current.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; light polarisation; optical switches; ridge waveguides; semiconductor lasers; semiconductor switches; waveguide lasers; /spl mu/m ridge waveguide InGaAsP-InP lasers; 1.3 mum; InGaAsP-InP; TE polarization; TM polarization; active layer strain; external mechanical force; injection current; light emission; light power current characteristics; mode spectra; polarization switching; strained 1.3 /spl mu/m semiconductor lasers; strained semiconductor lasers; Electrons; Kinetic energy; Laser modes; Optical polarization; Optical scattering; Phonons; Quantum cascade lasers; Semiconductor lasers; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865744