Title :
Hi-C isolation of DRAM storage capacitors
Author :
Erb, D.M. ; McCombs, A. ; Radwin, M.
Author_Institution :
Advanced Micro Devices Inc., Sunnyvale, California
Abstract :
A new method of isolating adjacent DRAM capacitors is presented and characterized. This method increases the capacitor area available for charge storage by 39% over conventional semi-recessed field isolation. Hi-C isolation has been used to make high performance 64K DRAM´s which exhibit acceptable refresh properties up to 125°C.
Keywords :
Boron; Capacitance; Capacitors; Electrodes; Etching; Implants; Oxidation; Power supplies; Random access memory; Testing;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190367
