• DocumentCode
    3555902
  • Title

    Hi-C isolation of DRAM storage capacitors

  • Author

    Erb, D.M. ; McCombs, A. ; Radwin, M.

  • Author_Institution
    Advanced Micro Devices Inc., Sunnyvale, California
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    612
  • Lastpage
    615
  • Abstract
    A new method of isolating adjacent DRAM capacitors is presented and characterized. This method increases the capacitor area available for charge storage by 39% over conventional semi-recessed field isolation. Hi-C isolation has been used to make high performance 64K DRAM´s which exhibit acceptable refresh properties up to 125°C.
  • Keywords
    Boron; Capacitance; Capacitors; Electrodes; Etching; Implants; Oxidation; Power supplies; Random access memory; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190367
  • Filename
    1482901
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555902