Title :
A subthreshold load element for high density static RAM
Author :
Wang, K.L. ; Shah, A.H. ; Shichijo, H. ; Gosmeyer, C. ; Chatterjee, P.K.
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
Abstract :
A MOSFET biased in the subthreshold region is discussed as a simple means of realizing a high impedance load (100 Mohm - 50 Gohm) for NMOS sRAMs. The MOSFET is connected like a depletion load (Vgs= 0 V), but has a positive threshold (0.2-0.3 V). Short-channel and narrow-width effects and temperature effects on the subthreshold load characteristics were studied with two-dimensional models and characterized experimentally. Feasibility of the subthreshold load has been demonstrated.
Keywords :
Current measurement; Doping; Implants; Inverters; Leakage current; Low voltage; Semiconductor process modeling; Subthreshold current; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190371
