DocumentCode
3555909
Title
Physics and simulation of small MOS devices
Author
Fichtner, W.
Author_Institution
Bell Laboratories, Murray Hill, New Jersey
Volume
28
fYear
1982
fDate
1982
Firstpage
638
Lastpage
641
Abstract
The most effective way to design optimum devices with submicrometer geometries is the use of sophisticated and very complex two-and three-dimensional numerical models. This paper presents an overview of new developments in numerical simulation of small-geometry MOSFETs.
Keywords
Degradation; Doping; FETs; Fabrication; Geometry; MOS devices; MOSFETs; Numerical models; Numerical simulation; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190374
Filename
1482908
Link To Document