Title :
Physics and simulation of small MOS devices
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey
Abstract :
The most effective way to design optimum devices with submicrometer geometries is the use of sophisticated and very complex two-and three-dimensional numerical models. This paper presents an overview of new developments in numerical simulation of small-geometry MOSFETs.
Keywords :
Degradation; Doping; FETs; Fabrication; Geometry; MOS devices; MOSFETs; Numerical models; Numerical simulation; Physics;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190374
