N-type modulation doped strained InGaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition

Author

Hatori, Nobuaki ; Mukaihara, Toshikazu ; Ohnoki, N. ; Mizutani, Akihiko ; Koyama, Fumio ; Iga, Kenichi

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

fYear

1996

fDate

7-7 June 1996

Firstpage

184

Lastpage

185

Abstract

Summary form only given. In this report, we have demonstrated strained InGaAs-AlGaAs QW lasers employing the n-type modulation doping for reducing threshold current for the first time. We achieved a threshold current density of 200 A/cm/sup 2/ modulation doped three quantum well lasers. The n type modulation doping is applied to InGaAs-AlGaAs materials and threshold reduction is observed.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; quantum well lasers; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; InGaAs-AlGaAs; InGaAs-AlGaAs QW lasers; InGaAs-AlGaAs material; N-type modulation doped; metal organic chemical vapor deposition; modulation doped quantum well lasers; n-type modulation doping; strained InGaAs/AlGaAs quantum well lasers; threshold current; threshold current density; threshold reduction; Chemical lasers; Epitaxial layers; Indium gallium arsenide; Laser modes; Laser transitions; Organic chemicals; Quantum well lasers; Tellurium; Tensile stress; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865745