• DocumentCode
    3555910
  • Title

    700 Å Gate length buried channel Silicon MOSFET´s

  • Author

    Swartz, R.G. ; Howard, R.E. ; Jackel, L.D. ; Grabbe, P. ; Epworth, R.W. ; Tennant, D.M. ; Archer, V.D.

  • Author_Institution
    Bell Telephone Laboratories, Holmdel, NJ
  • fYear
    1982
  • fDate
    13-15 Dec. 1982
  • Firstpage
    642
  • Lastpage
    645
  • Abstract
    Buried channel silicon MOSFETs with gate lengths as small as 700 Å have been fabricated using high-resolution electron-beam lithography, multilayer resists, reactive-ion etching, and low temperature processing. In this paper we describe the variations of I-V characteristic, transconductance, pinch-off voltage, and output resistance as a function of gate length.
  • Keywords
    Electrons; Fabrication; Implants; Lithography; MOSFETs; Metallization; Oxidation; Predictive models; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190375
  • Filename
    1482909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555910