Title :
700 Å Gate length buried channel Silicon MOSFET´s
Author :
Swartz, R.G. ; Howard, R.E. ; Jackel, L.D. ; Grabbe, P. ; Epworth, R.W. ; Tennant, D.M. ; Archer, V.D.
Author_Institution :
Bell Telephone Laboratories, Holmdel, NJ
Abstract :
Buried channel silicon MOSFETs with gate lengths as small as 700 Å have been fabricated using high-resolution electron-beam lithography, multilayer resists, reactive-ion etching, and low temperature processing. In this paper we describe the variations of I-V characteristic, transconductance, pinch-off voltage, and output resistance as a function of gate length.
Keywords :
Electrons; Fabrication; Implants; Lithography; MOSFETs; Metallization; Oxidation; Predictive models; Silicon; Voltage;
Conference_Titel :
Electron Devices Meeting, 1982 International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1982.190375
