Characterization of 1/f noise in MOS transistors

A 1/f noise model in MOS transistors has been developed by assuming both the mobility and density fluctuations in the channel. Using Si-gate MOS transistors with intentionally controlled interface properties, relations to 1/f noise of interface-state densities, gate voltages, process conditions and bias-temperature-stress-tests have been examined experimentally. These results are discussed by refering to the model. Process factors for 1/f noise reduction are also discussed.