Title :
Advanced concepts in VLSI Schottky-barrier diode modeling
Author :
Wagner, Lawrence F.
Author_Institution :
IBM General Technolgy Division, Hopewell Junction, NY
Abstract :
A VLSI Schottky-barrier diode is first studied in one and two dimensions using a numerical device analysis program in which thermionic-emission boundary conditions have been implemented for both holes and electrons. The analysis is extended to include large forward bias where the depletion region is replaced by an accumulation of surface electrons. A detailed equivalent circuit model, containing physically meaningful elements is then developed and extended to represent a realistic three-dimensional VLSI Schottky-barrier diode.
Keywords :
Anodes; Boundary conditions; Charge carrier processes; Electrons; Equivalent circuits; Integrated circuit modeling; Neodymium; Schottky diodes; Semiconductor diodes; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190384
