Title :
Notched InP planar transferred electron oscillators
Author :
Binari, S.C. ; Grubin, H.L. ; Thompson, P.E.
Author_Institution :
Naval Research Laboratory, Washington, DC
Abstract :
A novel device structure was devised which dramatically improved the power output and the DC to RF conversion efficiency of InP planar two terminal transferred electron oscillators. This structure consisted of a conventional planar device modified with an implanted, high resistivity notch located near the cathode contact. This structure attained CW operation at 10 GHz, a result not previously achieved with conventional unnotched devices. CW power outputs of 30 mW with efficiencies of 4.5% were obtained at 10.3 GHz.
Keywords :
Boron; Cathodes; Electrons; Fabrication; Geometry; Implants; Indium phosphide; Microwave devices; Oscillators; Radio frequency;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190409
