X-band self-aligned gate enhancement-mode InP MISFET´s

Self-aligned gate enhancement-mode InP/SiO2MISFETs with ∼ 0.8 µm channel length were successfully fabricated on an Fe-doped semi-insulating substrate. The fabricated MISFETs exhibited very high transconductance as high as 220 mS/mm and good X-band operation, especially marked high-power-output characteristics. The minimum noise figure at 4 GHz was 1.87 dB with 10.0 dB associated gain. 1.17 W/mm and 1.0 W/mm power outputs were obtained at 6.5 GHz and 11.5 GHz, respectively. 43.5 % maximum power-added efficiency was attained at 6.5 GHz.