• DocumentCode
    3555945
  • Title

    X-band self-aligned gate enhancement-mode InP MISFET´s

  • Author

    Itoh, Tomohiro ; Ohata, Keiichi

  • Author_Institution
    Nippon Electric Co., Ltd., Kawasaki, Japan
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    774
  • Lastpage
    777
  • Abstract
    Self-aligned gate enhancement-mode InP/SiO2MISFETs with ∼ 0.8 µm channel length were successfully fabricated on an Fe-doped semi-insulating substrate. The fabricated MISFETs exhibited very high transconductance as high as 220 mS/mm and good X-band operation, especially marked high-power-output characteristics. The minimum noise figure at 4 GHz was 1.87 dB with 10.0 dB associated gain. 1.17 W/mm and 1.0 W/mm power outputs were obtained at 6.5 GHz and 11.5 GHz, respectively. 43.5 % maximum power-added efficiency was attained at 6.5 GHz.
  • Keywords
    Electrodes; Electrons; Fabrication; Frequency; Indium phosphide; Insulation; MISFETs; Parasitic capacitance; Substrates; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190410
  • Filename
    1482944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555945