مرکز منطقه ای اطلاع رساني علوم و فناوري - Measurement of electron drift velocity in compositionally graded Al<inf>x</inf>Ga<inf>1-x</inf>As by time resolved optical picosecond reflectivity

DocumentCode :

3555946

Title :

Measurement of electron drift velocity in compositionally graded AlxGa1-xAs by time resolved optical picosecond reflectivity

Author :

Levine, B.F. ; Tsang, W.T. ; Bethea, C.G. ; Capasso, F.

Author_Institution :

Bell Laboratories, Murray Hill, NJ, USA

Volume :

fYear :

1982

fDate :

1982

Firstpage :

778

Lastpage :

780

Abstract :

The velocity of minority carrier electrons in a heavily doped (p = $2\\times10^{18}$ cm^-3) MBE grown compositionally graded (0.12 eV/µm) AlxGa1-xAs layer has been measured for the first time. The drift velocity is determined to be Ve= $2.3\\times10^{6}$ cm/sec in a quasi-electric field of 1.2 kV/cm.

Keywords :

Delay effects; Electron mobility; Geometrical optics; Laser excitation; Optical filters; Optical scattering; Photonic crystals; Probes; Space vector pulse width modulation; Velocity measurement;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Electron Devices Meeting, 1982 International

Type :

conf

DOI :

10.1109/IEDM.1982.190411

Filename :

1482945

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3555946