Title :
Enhancement of the electron velocity in GaAlAs-GaAs heterojunction bipolar transistor with abrupt emitter-base interface
Author :
Ankri, D. ; Schaff, W. ; Smith, P. ; Wood, C.E.C. ; Eastman, L.F.
Author_Institution :
Cornell University, Ithaca, NY
Keywords :
Bipolar transistors; Capacitance; Current measurement; Electrical resistance measurement; Electron emission; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Substrates;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190413
