Title :
Quadruple-well CMOS - A VLSI technology
Author_Institution :
Hughes Research Laboratories, Malibu, CA, USA
Keywords :
Boron; CMOS process; CMOS technology; FETs; Implants; Ionizing radiation; Laboratories; Testing; Very large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1982 International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1982.190415
