Title :
A 350V complementary LSI process using shallow junctions
Author :
Sakurai, T. ; Kato, K. ; Inabe, Y. ; Hayashi, T.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Keywords :
Artificial intelligence; Batteries; Breakdown voltage; Computer simulation; Dielectrics; Feeds; Hybrid integrated circuits; Impurities; Large scale integration; Passivation;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190416
