Title :
Selectively-doped Al0.48In0.52As/Ga0.47In0.52As heterostructure transistors
Author :
Pearsall, T.P. ; Hendel, R. ; O´Connor, P. ; Alavi, K. ; Cho, A.Y.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
Keywords :
Carrier confinement; Electron mobility; FET integrated circuits; Fabrication; Integrated circuit technology; Temperature; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190419
