Title :
Oxidized-nitridized oxide (ONO) for high performance EEPROMs
Author :
Chang, Thomas T L ; Jones, H. Stanley ; Jenq, Ching S. ; Johnson, W.S. ; Lee, Jimmy ; Lai, S.K. ; Dham, Vin
Author_Institution :
Intel Corporation, Santa Clara, CA
Keywords :
Capacitance-voltage characteristics; Dielectric breakdown; EPROM; Electrons; Indium tin oxide; Oxidation; Stress; Temperature; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190423
