DocumentCode

3555959

Title

Properties of thin oxynitride films used as floating-gate tunneling dielectrics

Author

Jenq, Ching S. ; Chiu, Te-Long ; Joshi, Bharati ; Hu, Jim

Author_Institution

SEEQ Technology, San Jose, California

Volume

28

fYear

1982

fDate

1982

Firstpage

811

Lastpage

812

Keywords

Annealing; Character generation; Dielectric devices; Dielectric thin films; Electron traps; Indium tin oxide; Read only memory; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1982 International

Type

conf

DOI

10.1109/IEDM.1982.190424

Filename

1482958