Title :
Modeling static and dynamic behavior of power devices
Author_Institution :
Technische Universität Wein, Wein, Austria
Abstract :
Comments on models of physical parameters involved in numerical power device simulation are given. Problems associated with carrier-carrier scattering, recombination and heavy doping are stressed. A transient quasi-three-dimensional simulation of a thyristor illustrates the state of the art in numerical power device modeling.
Keywords :
Analytical models; Doping; Electron mobility; Numerical analysis; Numerical models; Numerical simulation; Radiative recombination; Scattering; Semiconductor process modeling; Thyristors;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190443
