DocumentCode
3555990
Title
Extremely high efficient UHF power MOSFET for handy transmitter
Author
Itoh, Hidefumi ; Okabe, Takeaki ; Nagata, Minoru
Author_Institution
Hitachi Ltd., Gunma, Japan
Volume
29
fYear
1983
fDate
1983
Firstpage
95
Lastpage
98
Abstract
A UHF Power MOSFET suitable for use in handy transmitter is reported, which can deliver 5.0W of output power with 72% drain efficiency and 6.0dB gain at 860MHz for 7.5V low supply voltage. A new Power MOSFET is analyzed by two dimensional computer simulation to realize low voltage operation at ultra high frequency. This device has a Bi-Well Structure for low on resistance and small parastic capacitance. For high frequency performance, 1.3µm channel length and metal gate are empolyed. This device has also very wide band frequency characteristics and is able to withstand infinite VSWR. Thus, a UHF Power MOSFET is considered to be a significant candidate for handy telephone, mobile radio and other handy communication systems.
Keywords
Capacitance; Computer simulation; Frequency; Low voltage; MOSFET circuits; Power MOSFET; Power generation; Radio transmitters; Telephony; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Type
conf
DOI
10.1109/IEDM.1983.190449
Filename
1483574
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