DocumentCode :
3556038
Title :
Very low-threshold OMVPE-crown quantum-well lasers
Author :
Hersee, S.D. ; Razeghi, M. ; Blondeau, R. ; Krakowski, M. ; de Cremoux, B. ; Duchemin, J.P.
Author_Institution :
L.C.R., Thomson-CSF, Orsay, France
Volume :
29
fYear :
1983
fDate :
1983
Firstpage :
288
Lastpage :
291
Abstract :
This paper begins by reviewing the recent progress of single and multiple quantum well (SQW and MQW) lasers grown By OMVPE and MBE. Results are then presented of an extensive study of the GRIN-SCH and SCH GaAs/GaAlAs structures, where we have measured the major lasing characteristics, i.e, 
, for a wide range of quantum well thickness and layer composition.
, for a wide range of quantum well thickness and layer composition.Keywords :
DH-HEMTs; Electron optics; Epitaxial growth; Molecular beam epitaxial growth; Optical devices; Particle beam optics; Photonic integrated circuits; Quantum well devices; Quantum well lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1983 International
Type :
conf
DOI :
10.1109/IEDM.1983.190498
Filename :
1483623
Link To Document :
