• DocumentCode
    3556043
  • Title

    Room temperature pulsed operation of AlGaInp/GaInP double heterostructure visible light lasers grown by MOCVD

  • Author

    Hino, Isao ; Gomyo, Akiko ; Kobayashi, Kenichi ; Suzuki, Tohru

  • Author_Institution
    NEC Corporation, Kawasaki, Japan
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    308
  • Lastpage
    310
  • Abstract
    Room temperature pulsed operation of (Al0.3Ga0.7)0.5In0.5P/Ga0.5In0.5P/(Al0.3Ga0.7)0.5In0.5P double heterosturcture laser diodes grown by low pressure MOCVD has been achieved for the first time. The lowest threshold current density was 26kA/cm2for a diode with a 22 µm by 160 µm stripe contact. The lasing wavelength was 0.683 µm. Characteristic temperature Toin the expression, J_{th} \\infty \\exp (T/T_{o}) , was 72K near room temperature.
  • Keywords
    Crystalline materials; Epitaxial growth; Epitaxial layers; MOCVD; Molecular beam epitaxial growth; Optical materials; Optical pulses; Semiconductor materials; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190503
  • Filename
    1483628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556043