DocumentCode :
3556043
Title :
Room temperature pulsed operation of AlGaInp/GaInP double heterostructure visible light lasers grown by MOCVD
Author :
Hino, Isao ; Gomyo, Akiko ; Kobayashi, Kenichi ; Suzuki, Tohru
Author_Institution :
NEC Corporation, Kawasaki, Japan
Volume :
29
fYear :
1983
fDate :
1983
Firstpage :
308
Lastpage :
310
Abstract :
Room temperature pulsed operation of (Al0.3 Ga0.7 )0.5 In0.5 P/Ga0.5 In0.5 P/(Al0.3 Ga0.7 )0.5 In0.5 P double heterosturcture laser diodes grown by low pressure MOCVD has been achieved for the first time. The lowest threshold current density was 26kA/cm2for a diode with a 22 µm by 160 µm stripe contact. The lasing wavelength was 0.683 µm. Characteristic temperature To in the expression, 
, was 72K near room temperature.
, was 72K near room temperature.Keywords :
Crystalline materials; Epitaxial growth; Epitaxial layers; MOCVD; Molecular beam epitaxial growth; Optical materials; Optical pulses; Semiconductor materials; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1983 International
Type :
conf
DOI :
10.1109/IEDM.1983.190503
Filename :
1483628
Link To Document :
