• DocumentCode
    3556053
  • Title

    Silicon on insulating substrates - Recent advances

  • Author

    Hon Wai Lam

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Texas, USA
  • fYear
    1983
  • fDate
    5-7 Dec. 1983
  • Firstpage
    348
  • Lastpage
    351
  • Abstract
    Silicon-on-Insulator (SOI) technologies are becoming more important as CMOS becomes the preferred technology for VLSI. The progress of the three most actively researched SOI technologies, beam-recrystallized SOI, implanted buried oxide and Full Isolation by Porous Oxidized Silicon will be summarized in this paper.
  • Keywords
    Crystallization; Dielectric substrates; Dielectrics and electrical insulation; Electrons; Grain boundaries; Impurities; Lamps; Semiconductor films; Silicon; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190513
  • Filename
    1483638
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556053