Title :
Silicon on insulating substrates - Recent advances
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas, USA
Abstract :
Silicon-on-Insulator (SOI) technologies are becoming more important as CMOS becomes the preferred technology for VLSI. The progress of the three most actively researched SOI technologies, beam-recrystallized SOI, implanted buried oxide and Full Isolation by Porous Oxidized Silicon will be summarized in this paper.
Keywords :
Crystallization; Dielectric substrates; Dielectrics and electrical insulation; Electrons; Grain boundaries; Impurities; Lamps; Semiconductor films; Silicon; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1983 International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/IEDM.1983.190513
