Title :
Characteristics of MOS FET prepared on Si/MgO.Al2O3/SiO2/Si structure
Author :
Hokari, Yasuaki ; Mikami, Masao ; Egami, Koji ; Tsuya, Hideki ; Kanamori, Mitsuru ; Kanamori, Masaru
Author_Institution :
NEC Corporation, Kanagawa, Japan
Abstract :
A new SOI (silicon on insulator) wafer with epitaxial-Si/epitaxial-MgO.Al2O3(0.1 µm)/SiO2(0.5 µm)/Si7 (
Keywords :
Dielectric substrates; Electron mobility; FETs; Leakage current; Optical films; P-n junctions; Parasitic capacitance; Semiconductor films; Silicon compounds; Silicon on insulator technology;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190518
