Title :
Radiation tolerant direct-coupled MISFET logic on InP
Author :
Messick, L. ; Lile, D.L. ; Taylor, M.J. ; Zeisse, C.R. ; Collins, D.A.
Author_Institution :
Naval Ocean Systems Center, San Diego, CA
Abstract :
High-dynamic-range n-channel InP MISFET direct-coupled FET logic (DCFL) ring oscillator (RO) and inverter integrated circuits employing gate metallization lengths of 3.0 µm and exhibiting minimum observed propagation delay per stage tpd= 62 ps and minimum observed power delay prduct Ptpd= 22 fJ have been fabricated on Fe-doped semi-insulating substrate material. Preliminary total dose irradiation results on these RO structures as well as on InP CCD and discrete MISFET samples indicate that, under present test conditions, no changes in the performance of these devices can be attributed to the radiation flux to gamma doses as high as 108rad and neutron doses as high as 1.7 × 1013neutrons per cm2.
Keywords :
FET integrated circuits; Indium phosphide; Inorganic materials; Integrated circuit metallization; Logic circuits; MISFETs; Neutrons; Propagation delay; Pulse inverters; Ring oscillators;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190521
