• DocumentCode
    3556072
  • Title

    A high performance high voltage lateral PNP structure

  • Author

    Beasom, James D.

  • Author_Institution
    Harris Semiconductor, Melbourne, Florida
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    424
  • Lastpage
    427
  • Abstract
    An improved high voltage lateral PNP structure is described. Devices built with the structure have HFEand Early voltage as good as quality discrete devices and maintain fTgreater than 1.5 MHz at 350V. The process is simpler than those previously described for production of complementary vertical devices. Experimental results for a range of profiles and geometries are presented.
  • Keywords
    Application specific integrated circuits; Bandwidth; Doping profiles; Geometry; Impurities; Low voltage; Niobium; Nonhomogeneous media; Poisson equations; Production;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190532
  • Filename
    1483657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556072