Title :
Experimental study of a high blocking voltage power MOSFET with integrated input amplifier
Author :
Leipold, L. ; Tihanyi, J.
Author_Institution :
Siemens AG, Munich, West Germany
Abstract :
Using a slight modification of the SIPMOS® (Siemens Power MOS) technology an integrated test structure has been realized containing a vertical power MOS transistor and an input amplifier. The input amplifier, hich greatly reduces the input capacitance, consists of a vertical n-channel transistor and a lateral p-channel transistor. By this way short switching times are possible even with high-ohmic drivers.
Keywords :
Capacitance; Equivalent circuits; High power amplifiers; MOSFET circuits; Power MOSFET; Power amplifiers; Substrates; TV; Testing; Voltage;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190533
