DocumentCode :
3556084
Title :
Long wavelength, wide spectral response (0.8-1.8 µm) Al0.48In0.52As/Ga0.47In0.53As avalanche photodiodes and Al0.48In0.52As electroabsorption PIN avalanche detectors grown by molecular
Author :
Capasso, Federico ; Alavi, K. ; Cho, A.Y. ; Foy, P.W. ; Bethea, C.G.
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey
fYear :
1983
fDate :
5-7 Dec. 1983
Firstpage :
468
Lastpage :
471
Abstract :
We report the first Al0.48 In0.52 As/Ga0.47 - In0.53 As SAM avalanche photodiode, The device, grown by MBE, has high responsitivity over a wide spectral range (0.85-1.7µm). Avalanche gains of ≅ 27 at low voltages ( 
V) are observed. Fast response with a FWHM of = 250ps and no tails are observed. In addition a new APD structure (HI-LO SAM APD) exhibiting superior performance with respect to a conventional SAM APD has been demonstrated. This novel design improves the conventional SAM APD by the addition of an electric field profile resembling that of an Impatt diode. A gain of 50 and a low dark current (InA) have been demonstrated in the same material system. Finally the operation of electroabsorption pin APD\´s is also reported.
V) are observed. Fast response with a FWHM of = 250ps and no tails are observed. In addition a new APD structure (HI-LO SAM APD) exhibiting superior performance with respect to a conventional SAM APD has been demonstrated. This novel design improves the conventional SAM APD by the addition of an electric field profile resembling that of an Impatt diode. A gain of 50 and a low dark current (InA) have been demonstrated in the same material system. Finally the operation of electroabsorption pin APD\´s is also reported.Keywords :
Avalanche photodiodes; Dark current; Delay; Detectors; Electrons; Heterojunctions; Indium phosphide; Low voltage; Molecular beam epitaxial growth; Tail;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1983 International
Conference_Location :
Washington, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1983.190544
Filename :
1483669
Link To Document :
