DocumentCode
3556111
Title
PROM Cell made with an EPROM process
Author
Folmsbee, Alan C.
Author_Institution
Intel Corporation, Santa Clara, California
Volume
29
fYear
1983
fDate
1983
Firstpage
574
Lastpage
576
Abstract
A floating-gate PROM cell has been developed which is electrically the same as an EPROM cell but which is not erasable with UV radiation. A metal shield is fabricated so that it surrounds the transistor and increases the time for erasure consistently beyond the 168 hour goal. A practical result of this work is that the shielded PROM cell is used on a 128K EPROM to provide redundancy circuits with information defining which rows in the array are to be replaced by redundant rows.
Keywords
Attenuation; Circuits; EPROM; Electrons; Insulation; Nonvolatile memory; Optical reflection; Optical refraction; PROM; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Type
conf
DOI
10.1109/IEDM.1983.190571
Filename
1483696
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