DocumentCode
3556120
Title
Optimum profiles for low-noise ion-implanted GaAs MESFETs
Author
Khatibzadeh, M.A. ; Trew, R.J. ; Masnari, N.A. ; Golio, J.M.
Author_Institution
North Carolina State University, Raleigh, North Carolina
Volume
29
fYear
1983
fDate
1983
Firstpage
605
Lastpage
608
Abstract
The noise and RF performance of recessed-gate GaAs ion-implanted MESFETs as a function of various doping profiles has been theoretically investigated. The effects of implant energy and dose as well as varying deep-level concentration are included. Degradation of device performance with increasing deep-level concentration is predicted and the responsible physical mechanisms revealed. Also, an optimum gate recess depth is shown to exist. The study has indicated a number of design rules for the fabrication of optimized, low-noise ion-implanted MESFETs.
Keywords
Degradation; Design optimization; Electron traps; Fabrication; Gallium arsenide; Implants; Impurities; MESFETs; Noise figure; Performance gain;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Type
conf
DOI
10.1109/IEDM.1983.190579
Filename
1483704
Link To Document