Abstract :
As the fabrication steps in VLSI technology become more complicated and inevitably more expensive, the modeling of these steps and the resulting device performance with the aid of a computer has emerged as a convenient solution. With the trend in the present day VLSI processing toward higher doping levels, many ion implantations, lower processing temperatures and local oxidations for isolation, process simulation programs should be flexible to incorporate evolving physical models easily. Also the programs should be capable of simulating nonplanar device structures and other two- dimensional effects. This paper will review some recent developments in process modeling and related computer simulation activities with a special emphasis on tile physical models and the implementation of these models in the BICEPS program developed at AT & T Bell laboratories.
