A new low resistance shallow junction formation method using lateral diffusion through silicide

A new low resistance shallow junction formation method is described. The new method utilizes extensive dopants lateral diffusion through a metal silicide layer formed between a silicon substrate and an insulating film. This technology enables reversing the process sequence between doping and insulating film deposition, i.e., it enables a doping process after insulating film deposition. MOSFETs with Mo-silicided source/drain and gate and Mo-silicided n⁺-p junction diodes were fabricated as device application demonstrations of the new technology.