• DocumentCode
    3556142
  • Title

    GaAsP-InGaAs superlattice light-emitting diodes

  • Author

    Timmons, M.L. ; Katsuyama, T. ; Sillmon, R. ; Bedair, S.M.

  • Author_Institution
    Research Triangle Institute, Research Triangle Park, NC
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    692
  • Lastpage
    695
  • Abstract
    A strained-layer superlattice using layers of GaAs0.8P0.2-In0.9Ga0.1As is described which has an average latice constant matched to GaAs; this permits growth of devices directly on GaAs. A double-heterostructure light emitting diode, emitting near 1 µm with the superlattice structure, have been characterized and shows no degradation in 200 h of operation at 25°C and 20 A/cm2. A three-terminal, dual-wavelength LED has been fabricated with peak emissions at 0.886 and 0.874 µm. This device has very high series resistance.
  • Keywords
    Electron mobility; Gallium arsenide; Indium gallium arsenide; Laser sintering; Lattices; Light emitting diodes; Molecular beam epitaxial growth; Optoelectronic devices; Substrates; Superlattices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190602
  • Filename
    1483727
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556142