مرکز منطقه ای اطلاع رساني علوم و فناوري - n-Channel MISFETs on long wavelength p-Hg<inf>1-x</inf>Cd<inf>x</inf>Te

DocumentCode :

3556147

Title :

n-Channel MISFETs on long wavelength p-Hg1-xCdxTe

Author :

Schiebel, R.A.

Author_Institution :

Texas Instruments Incorporated, Dallas, Texas

Volume :

fYear :

1983

fDate :

1983

Firstpage :

711

Lastpage :

714

Abstract :

Depletion mode MISFETs have been fabricated and operated on long wavelength (λc= 11.0 µm) Hg1-xcdxTe for the first time. Current voltage characteristics of the devices are presented and discussed. The surface mobility of electrons has been calculated from these data to be $\\sim 6 \\times 10^{4}$ cm²/Vs the highest ever observed on a Hg1-xCdxTe to MISFET. Small signal parameters are also derived from current voltage characteristics. The operation of a Hg1-xcdxTe MISFET as an amplifier with gain is demonstrated, and data on a fully integrated Hg1-xcdxTe source follower circuit is presented and discussed.

Keywords :

Current-voltage characteristics; Detectors; Diodes; Implants; Integrated circuit technology; MISFETs; Operational amplifiers; Sensor arrays; Voltage; Wavelength measurement;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Electron Devices Meeting, 1983 International

Type :

conf

DOI :

10.1109/IEDM.1983.190607

Filename :

1483732

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3556147