DocumentCode :
3556150
Title :
A PtSi Schottky-barrier infrared MOS area imager with large fill factor
Author :
Denda, Masahiko ; Kimata, Masafumi ; Yutani, Naoki ; Tsubouchi, Natsuro ; Uematsu, Shigeyuki
Author_Institution :
Mitsubishi Electric Corporation, Hyogo, Japan
Volume :
29
fYear :
1983
fDate :
1983
Firstpage :
722
Lastpage :
725
Abstract :
A 64 × 64-element silicon monolithic infrared MOS area imager (IR-MOS) with platinum silicide Schottky barrier (PtSi S.B.) detectors has been developed. Using MOS X-Y address circuitry, the fill facter of the device increased to 56 percent without degradation of the dynamic range. The dynamic range was 48 dB The responsivity was 
V/W at 1000 K and the sensitivity was 10.5 mV/K at 300 K. The performance of the IR-MOS was sufficient to obtain a thermal image in the range of the 3 to 5 µm atmospheric window without any electrical compensation of the imaged signal.
V/W at 1000 K and the sensitivity was 10.5 mV/K at 300 K. The performance of the IR-MOS was sufficient to obtain a thermal image in the range of the 3 to 5 µm atmospheric window without any electrical compensation of the imaged signal.Keywords :
Circuits; Dynamic range; Infrared detectors; Infrared imaging; Large scale integration; Platinum; Schottky barriers; Silicides; Silicon; Thermal degradation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1983 International
Type :
conf
DOI :
10.1109/IEDM.1983.190610
Filename :
1483735
Link To Document :
