DocumentCode
3556152
Title
A new floating gate cell and technology for a 5 volt only CMOS 16K EEPROM
Author
Logie, S. ; Harari, E. ; Li, S. ; Liu, W. ; Das, R.
Author_Institution
Synertek Inc., Santa Clara, California
Volume
29
fYear
1983
fDate
1983
Firstpage
733
Lastpage
735
Keywords
CMOS process; CMOS technology; Degradation; EPROM; Electrodes; Nonvolatile memory; Parasitic capacitance; Power generation; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Type
conf
DOI
10.1109/IEDM.1983.190612
Filename
1483737
Link To Document