Submicron self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance

Author

Cheng, C.L. ; Liao, A.S.H. ; Chang, T.Y. ; Leheny, R.F. ; Coldren, R.F. ; Lalevic, B.

Author_Institution

Bell Laboratories, Holmdel, New Jersey

Volume

fYear

1983

fDate

1983

Firstpage

754

Lastpage

756

Keywords

Chromium; FETs; Gold; Indium gallium arsenide; Indium phosphide; MISFETs; Metallization; Sputter etching; Substrates; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1983 International

Type

DOI

10.1109/IEDM.1983.190621

Filename

1483746

Link To Document