• DocumentCode
    3556162
  • Title

    VLSI Device fabrication using a unique, highly-selective Si3N4dry etching

  • Author

    Kure, T. ; Kawamoto, Y. ; Hashimoto, N. ; Takaichi, T.

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    757
  • Lastpage
    759
  • Keywords
    Anisotropic magnetoresistance; Chemical processes; Dry etching; Electron devices; Fabrication; Gases; Laboratories; Plasma applications; Polymers; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190622
  • Filename
    1483747
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556162