Title :
A study of avalanche breakdown in scaled n-MOSFETs
Author :
Laux, S.E. ; Gaensslen, F.
Author_Institution :
IBM T. J. Watson Research Center, Yorktown Heights, NY
Abstract :
The behavior of channel breakdown in n-MOSFETs miniaturized by isothermal, constant field scaling is examined. Both a first-order analytical estimate and rigorous two-dimensional numerical simulation are used to understand the scaling of channel breakdown. A sublinear dependence of sustaining and snapback voltages on channel length is found and explained.
Keywords :
Algorithm design and analysis; Avalanche breakdown; Doping; Electric breakdown; Equations; Implants; Isothermal processes; MOSFET circuits; Numerical simulation; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190648
