Self-aligned titanium silicidation of submicron MOS devices by rapid lamp annealing

Titanium silicidation of source/drain and gate of MOS devices has been developed by using rapid lamp annealing. A rapid thermal processing with halogen lamp heating is found to be quite effective to form oxide-free titanium silicide. Silicidation reaction is completed within as short as 30 sec, and results in stoichiometric titanium disilicide with 14-16 µohm.cm of resistivity. A self-aligned silicidation is achieved by oxide side walls combined with LDD structure, which realizes submicron MOS transistors with 2-3 ohm/sq of sheet resistance of source/drain and gate. The gate dielectric integrity and the junction integrity of silicided devices are comparable with those of control devices without silicidation.